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UCT EN T R OD TE P E PLACE M ter at S OL E E D R OB t Ce n /tsc EN D ppor OM M nical Su tersil.com C O RE NData ur Te ch r www.in o Sheet ntact TE RS IL o co -IN 88 1- 8
EL2075
September 26, 2001 FN7151
2GHz GBWP Gain-of-10 Stable Operational Amplifier
The EL2075 is a precision voltagefeedback amplifier featuring a 2GHz gain-bandwidth product, fast settling time, excellent differential gain and differential phase performance, and a minimum of 50mA output current drive over temperature. The EL2075 is gain-of-10 stable with a -3dB bandwidth of 400MHz at AV = +10. It has a very low 200V of input offset voltage, only 2A of input bias current, and a fully symmetrical differential input. Like all voltage-feedback operational amplifiers, the EL2075 allows the use of reactive or non-linear components in the feedback loop. This combination of speed and versatility makes the EL2075 the ideal choice for all op-amp applications at a gain of 10 or greater requiring high speed and precision, including active filters, integrators, sample-and-holds, and log amps. The low distortion, high output current, and fast settling makes the EL2075 an ideal amplifier for signal-processing and digitizing systems.
Features
* 2GHz gain-bandwidth product * Gain-of-10 stable * Conventional voltage-feedback topology * Low offset voltage = 200V * Low bias current = 2A * Low offset current = 0.1A * Output current = 50mA over temperature * Fast settling = 13ns to 0.1%
Applications
* Active filters/integrators * High-speed signal processing * ADC/DAC buffers * Pulse/RF amplifiers * Pin diode receivers * Log amplifiers
EL2075 (8-PIN SO, PDIP) TOP VIEW
* Photo multiplier amplifiers * High speed sample-and-holds
Ordering Information
PART NUMBER EL2075CN EL2075CS TEMP. RANGE 0C to +75C 0C to +75C PACKAGE 8-Pin PDIP 8-Pin SO PKG. NO. MDP0031 MDP0027
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EL2075
Absolute Maximum Ratings (TA = 25C)
Supply Voltage (V S). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7V Common-Mode Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V
Note: See EL2071/EL2171 for Thermal Impedance curves. CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Output Current Output is short-circuit protected to ground, however, maximum reliability is obtained if IOUT does not exceed 70mA.
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . .JA = 95C/W PDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JA = 175C/W SO-8 Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . 0C to +75C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . -60C to +150C
Open-Loop DC Electrical Specifications
PARAMETER VOS DESCRIPTION Input Offset Voltage
VS = 5V, RL = 100, unless otherwise specified. TEST CONDITIONS VCM = 0V TEMP 25C TMIN, TMAX MIN TYP 0.2 MAX 1 2.5 8 2 0.1 6 1 2 70 70 90 90 21 25 25 15 1 1 1 50 3 2.5 50 3.5 3 2.5 1000 800 800 600 2.3 3.2 2300 70 4 3.6 3.4 2800 3.5 UNIT mV mV V/C A A A dB dB mA mA k pF M pF m V V mA V V V V/V V/V V/V V/V nV/Hz pA/Hz
TCV OS IB IOS
Average Offset Voltage Drift Input Bias Current Input Offset Current
(Note 1) VCM = 0V VCM = 0V
All All 25C TMIN, TMAX
PSRR CMRR IS
Power Supply Rejection Ratio Common Mode Rejection Ratio Supply Current--Quiescent
(Note 2) (Note 3) No Load
All All 25C TMIN, TMAX
RIN (diff) CIN (diff) RIN (cm) CIN (cm) ROUT CMIR
RIN (Differential) CIN (Differential) RIN (Common-Mode) CIN (Common-Mode) Output Resistance Common-Mode Input Range Output Current Output Voltage Swing Output Voltage Swing Output Voltage Swing Open-Loop Gain
Open-Loop Open-Loop
25C 25C 25C 25C 25C 25C TMIN, TMAX All
IOUT VOUT VOUT 100 VOUT 50 AVOL 100
No Load 100 50 100
All All All 25C TMIN, TMAX
AVOL 50
Open-Loop Gain
50
25C TMIN, TMAX
eN@ > 1MHz iN@ > 100kHz NOTES:
Noise Voltage 1-100MHz Noise Current 100k-100MHz
25C 25C
1. Measured from T MIN, TMAX. 2. VCC = 4.5V to 5.5V. 3. VIN = 2.5V, V OUT = 0V.
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EL2075
Closed-Loop AC Electrical Specifications
PARAMETER SSBW DESCRIPTION -3dB Bandwidth (VOUT = 0.4VPP) VS = 5V, AV = +20, RF = 1500, RL = 100 unless otherwise specified. TEST CONDITIONS AV = +10 AV = +20 TEMP 25C 25C TMIN, TMAX AV = +50 GBWP LSBWa LSBWb GFPL Gain-Bandwidth Product -3dB Bandwidth -3dB Bandwidth Peaking (< 50MHz) AV = +100 VOUT = 2VPP (Note 1) VOUT = 5VPP (Note 1) VOUT = 0.4V PP 25C 25C All All 25C TMIN, TMAX GFPH Peaking (> 50MHz) VOUT = 0.4V PP 25C TMIN, TMAX GFR Rolloff (< 100MHz) VOUT = 0.4V PP 25C TMIN, TMAX LPD PM tR1, tF1 tR2, tF2 tS1 tS2 OS SR Linear Phase Deviation (< 100MHz) Phase Margin Rise Time, Fall Time Rise Time, Fall Time Settling to 0.1% (AV = -20) Settling to 0.01% (AV = -20) Overshoot Slew Rate VOUT = 0.4V PP AV = +10 0.4V Step, AV = +10 5V Step, AV = +10 2V Step 2V Step 2V Step, AV = +10 2V Step, AV = +10 All 25C 25C 25C 25C 25C 25C All 500 1 60 1.2 6 13 25 10 800 0.1 0 80 32 150 125 40 2.0 128 50 0 0.5 0.5 1 1 0.5 0.5 1.8 MIN TYP 400 200 MAX UNIT MHz MHz MHz MHz GHz MHz MHz dB dB dB dB dB dB ns ns ns ns % V/s
DISTORTION (Note 2) HD2 2nd Harmonic Distortion @ 20MHz, AV = +20 25C TMIN, TMAX HD3 3rd Harmonic Distortion @ 20MHz, AV = +20 25C TMIN, TMAX NOTES: 1. Large-signal bandwidth calculated using LSBW = Slew Rate (2 * VPEAK). 2. All distortion measurements are made with VOUT = 2VPP, RL = 100. -65 -40 -30 -30 -50 -50 dBc dBc dBc dBc
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EL2075 Typical Performance Curves
Non-Inverting Frequency Response Inverting Frequency Response Frequency Response for Various RLs
Open Loop Gain and Phase
Output Voltage Swing vs Frequency
Equivalent Input Noise
PSRR, CMRR, and Closed-Loop RO Frequency
2nd and 3rd Harmonic Distortion vs Frequency
2-Tone, 3rd Order Intermodulation Intercept
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EL2075 Typical Performance Curves
(Continued)
Settling Time vs Output Voltage Change Settling Time vs Closed-Loop Gain
Series Resistor and Resulting Bandwidth vs Capacitive Load
Common-Mode Rejection Ratio vs Input Common-Mode Voltage
Bias and Offset Current vs Input Common-Mode Voltage
Supply Current vs Temperature
Bias and Offset Current vs Temperature
Offset Voltage vs Temperature
AVOL, PSRR, and CMRR vs Temperature
Small Signal Transient Response
Large Signal Transient Response
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EL2075 Equivalent Circuit
Burn-In Circuit
for applications such as active filters, sample-and-holds, or integrators. Similarly, because of the ability to use diodes in the feedback network, the EL2075 is an excellent choice for applications such as log amplifiers. The EL2075 also has excellent DC specifications: 200V, VOS , 2A IB, 0.1A I OS , and 90dB of CMRR. These specifications allow the EL2075 to be used in DC-sensitive applications such as difference amplifiers. Furthermore, the current noise of the EL2075 is only 3.2pA/Hz, making it an excellent choice for high-sensitivity transimpedance amplifier configurations.
Gain-Bandwidth Product
All Packages Use The Same Schematic
Applications Information
Product Description
The EL2075 is a wideband monolithic operational amplifier built on a high-speed complementary bipolar process. The EL2075 uses a classical voltage-feedback topology which allows it to be used in a variety of applications requiring a noise gain 10 where current-feedback amplifiers are not appropriate because of restrictions placed upon the feedback element used with the amplifier. The conventional topology of the EL2075 allows, for example, a capacitor to be placed in the feedback path, making it an excellent choice
The EL2075 has a gain-bandwidth product of 2GHz. For gains greater than 40, its closed-loop -3dB bandwidth is approximately equal to the gain-bandwidth product divided by the noise gain of the circuit. For gains less than 40, higher-order poles in the amplifier's transfer function contribute to even higher closed loop bandwidths. For example, the EL2075 has a -3dB bandwidth of 400MHz at a gain of +10, dropping to 200MHz at a gain of +20. It is important to note that the EL2075 has been designed so that this "extra" bandwidth in low-gain applications does not come at the expense of stability. As seen in the typical performance curves, the EL2075 in a gain of +10 only exhibits 1.5dB of peaking with a 100 load.
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EL2075
Output Drive Capability
The EL2075 has been optimized to drive 50 and 75 loads. It can easily drive 6VPP into a 50 load. This high output drive capability makes the EL2075 an ideal choice for RF and IF applications. Furthermore, the current drive of the EL2075 remains a minimum of 50mA at low temperatures. The EL2075 is current-limited at the output, allowing it to withstand momentary shorts to ground. However, power dissipation with the output shorted can be in excess of the power-dissipation capabilities of the package. reference. Values of R S were chosen to maximize resulting bandwidth without additional peaking.
Printed-Circuit Layout
As with any high-frequency device, good PCB layout is necessary for optimum performance. Ground-plane construction is highly recommended, as is good power supply bypassing. A 1F-10F tantalum capacitor is recommended in parallel with a 0.01F ceramic capacitor. All pin lengths should be as short as possible, and all bypass capacitors should be as close to the device pins as possible. Parasitic capacitances should be kept to an absolute minimum at both inputs and at the output. Resistor values should be kept under 1000 to 2000 because of the RC time constants associated with the parasitic capacitance. Metal-film and carbon resistors are both acceptable, use of wire-wound resistors is not recommended because of parasitic inductance. Similarly, capacitors should be lowinductance for best performance. If possible, solder the EL2075 directly to the PC board without a socket. Even high quality sockets add parasitic capacitance and inductance which can potentially degrade performance. Because of the degradation of AC performance due to parasitics, the use of surface-mount components (resistors, capacitors, etc.) is also recommended.
Capacitive Loads
Although the EL2075 has been optimized to drive resistive loads as low as 50, capacitive loads will decrease the amplifier's phase margin which may result in peaking, overshoot, and possible oscillation. For optimum AC performance, capacitive loads should be reduced as much as possible or isolated via a series output resistor. Coax lines can be driven, as long as they are terminated with their characteristic impedance. When properly terminated, the capacitance of coaxial cable will not add to the capacitive load seen by the amplifier. Capacitive loads greater than 10pF should be buffered with a series resistor (RS) to isolate the load capacitance from the amplifier output. A curve of recommended RS vs C LOAD has been included for
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 7
EL2075 EL2075 Macromodel
* * Connections: input * | -input * | | +Vsupply * | | | -Vsupply * | | | | output * | | | || .subckt M2075C 3 2 7 4 6 * *Input Stage * ie 37 4 1mA r6 36 37 15 r7 38 37 15 rc1 7 30 200 rc2 7 39 200 q1 30 3 36 qn q2 39 2 38 qna ediff 33 0 39 30 1 rdiff 33 0 1 Meg * * Compensation Section * ga 0 34 33 0 2m rh 34 0 500K ch 34 0 0.4 pF rc 34 40 50 cc 40 0 0.05 pF * * Poles * ep 41 0 40 0 1 rpa 41 42 250 cpa 42 0 0.8 pF rpb 42 43 50 cpb 43 0 0.5 pF * * Output Stage * ios1 7 50 3.0mA ios2 51 4 3.0mA q3 4 43 50 qp q4 7 43 51 qn q5 7 50 52 qn q6 4 51 53 qp ros1 52 6 2 ros2 6 53 2 * * Power Supply Current * ips 7 4 11.4mA * * Models * .model qna npn(is800e-18 bf170 tf0.2ns) .model qn npn(is810e-18 bf200 tf0.2ns) .model qp pnp(is800e-18 bf200 tf0.2ns) .ends
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